A Monolithic 40 V/20 A GaN Half Bridge JC with Integrated Gate Drivers and Level-shifters

A Monolithic 40 V/20 A GaN Half Bridge IC with Integrated Gate Drivers and Level-shifters, written by Oncü Benli Marin Palomo, Jef Thone, Rana Asad Ali, Mahmoud Shousha, Martin Haug, Olga Syshchyk, Matteo Borga, Stefaan Decoutere, Marc Fossion, Tuan-Dat Mai, and Mike Wens will be soon published at the occasion of ECCE 2024 Conference (IEEE Energy Conversion Conference and Expo).

Link: here

Abstract:

40 V-rated half-bridges are realized in 100 V Gallium-Nitride on Silicon (GaN-on-Si) and 100 V GalliumNitride on Silicon-on-Insulator (GaN-on-SOI) technologies from IMEC. Electrical characterization is done to investigate several key parameters such as on-resistance, gate and drain leakage, and output capacitance. The performance of GaN-onSi and GaN-on-SOI technologies are compared. In addition, step-stress testing and key parameter drift analysis are performed on the GaN-on-Si half-bridges. Furthermore, a monolithic 40 V/20 A half-bridge with integrated gate drivers, level shifters, floating supplies, and dead time controller circuitry is realized in 100 V GaN-on-Si technology as a part of a point-of-load (PoL) converter achieving 80 % efficiency and reaching an integrated solution with IC active area of 44.15 mm2 which is 35 % smaller compared to state-of-the-art commercial integrated solutions. Functionality tests are performed for integrated monolithic half-bridge chips. Finally, further testing is done on a system-level Si-GaN hybrid PoL converter.